The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Aug. 24, 2021
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Takayuki Sasaki, Yokohama Kanagawa, JP;
Yukihiro Nomura, Taito Tokyo, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8828 (2023.02); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H10B 63/24 (2023.02); H10N 70/231 (2023.02); G11C 2013/0083 (2013.01); G11C 2213/72 (2013.01);
Abstract
A storage device includes a resistance change memory element including a first electrode, a second electrode, a resistance change layer between the first and second electrodes, including at least two elements selected from a group consisting of germanium (Ge), antimony (Sb), and tellurium (Te), and having a crystal structure with a c-axis oriented in a first direction from the first electrode toward the second electrode, and a first layer between the first electrode and the resistance change layer and including nitrogen (N) and at least one of silicon (Si) or germanium (Ge).