Solid-state imaging device, imaging apparatus, and method of manufacturing solid-state imaging device

Abstract

The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield. A solid-state imaging device including: a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array; and a stacked body formed by stacking a plurality of layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices; a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface; and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has a plurality of structures at a height generally equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.