The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Sep. 25, 2020
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Mariam Sadaka, Austin, TX (US);
Date J. Noorlag, Seongnam, KR;
Assignee:
Apple Inc., Cupertino, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/42 (2006.01); H01S 5/40 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18313 (2013.01); H01S 5/18327 (2013.01); H01S 5/18344 (2013.01); H01S 5/2205 (2013.01); H01S 5/4025 (2013.01); H01S 5/423 (2013.01); H01S 2301/176 (2013.01);
Abstract
Trenched VCSEL emitter structures are described. In an embodiment, an emitter structure includes a cluster of non-uniformly distributed emitters in which each emitter includes an inside mesa trench and an oxidized portion of an oxide aperture layer extending from the inside mesa trench. An outside moat trench is located adjacent the inside mesa trench and is formed to a depth past the oxide aperture layer.