The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Nov. 27, 2018
Applicant:

Dic Corporation, Tokyo, JP;

Inventors:

Peixin Zhu, Chiba, JP;

Shinji Kato, Chiba, JP;

Ryuuichi Kiyooka, Chiba, JP;

Katsuhito Kuroki, Chiba, JP;

Satoshi Katano, Chiba, JP;

Takahito Ikuma, Chiba, JP;

Assignee:

DIC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/58 (2010.01); H01M 4/04 (2006.01); H01M 4/48 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/58 (2013.01); H01M 4/0471 (2013.01); H01M 4/48 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01);
Abstract

An object of the present invention is to provide a negative electrode active material having excellent charge/discharge characteristics (charge and discharge capacities, initial coulombic efficiency, and cycle characteristics). The object is achieved by providing a negative electrode active material containing: a silicon-based inorganic compound (a) composed of silicon (excluding zerovalent silicon), oxygen, and carbon; and silicon (zerovalent) (b). The equivalent constituent ratio [Q units/(D units+T units+Q units)] indicating the chemical bonding state (D units [SiOC], T units [SiOC], Q units[SiO]) of the silicon (excluding zerovalent silicon) present in the silicon-based inorganic compound (a) is within the range of from 0.30 to 0.80 inclusive.


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