The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Mar. 28, 2019
Applicant:
Vishay Semiconductor Gmbh, Heilbronn, DE;
Inventor:
Manuel Schmidt, Waghausel, DE;
Assignee:
Vishay Semiconductor GmbH, Waghausel, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/11 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1105 (2013.01); H01L 31/18 (2013.01);
Abstract
A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.