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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11876142 B1

PDFFull Text
Date of Patent:
Jan. 16, 2024

Filed:

Apr. 01, 2020

Pn junction and preparation method and use thereof

Applicant:

Sunflare CO, La Verne, CA (US);

Inventors:

Liang Gao, Rowland Heights, CA (US);

Zhun Zhang, Chaozhou, CN;

Yu-Ting Lin, Taichung, TW;

Assignee:

Sunflare Co, La Verne, CA (US);

Attorney:

Lerner David LLP

Primary Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 31/032 (2006.01); C23C 14/18 (2006.01); C23C 14/35 (2006.01); C23C 14/58 (2006.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/103 (2006.01); H01L 31/173 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); C23C 14/18 (2013.01); C23C 14/35 (2013.01); C23C 14/5806 (2013.01); H01L 31/02322 (2013.01); H01L 31/022466 (2013.01); H01L 31/103 (2013.01); H01L 31/173 (2013.01); H01L 31/1864 (2013.01);
Abstract

The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InGa)Se, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.

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