The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
May. 02, 2013
Applicant:
First Solar, Inc., Tempe, AZ (US);
Inventors:
Holly Ann Blaydes, Perrysburg, OH (US);
Kristian William Andreini, Burnt Hills, NY (US);
William Hullinger Huber, Ottawa Hills, OH (US);
Eugene Thomas Hinners, Gansevoort, NY (US);
Joseph John Shiang, Niskayuna, NY (US);
Yong Liang, Niskayuna, NY (US);
Jongwoo Choi, Boise, ID (US);
Assignee:
First Solar, Inc., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0272 (2006.01); H01L 31/073 (2012.01); H01L 31/0296 (2006.01); H01L 31/0224 (2006.01); H01L 21/02 (2006.01); H01L 31/0392 (2006.01); H01L 31/072 (2012.01); H01L 31/18 (2006.01); C23C 14/06 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0272 (2013.01); C23C 14/0629 (2013.01); H01L 21/0248 (2013.01); H01L 21/0251 (2013.01); H01L 21/0256 (2013.01); H01L 21/02422 (2013.01); H01L 21/02477 (2013.01); H01L 21/02483 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02562 (2013.01); H01L 31/0296 (2013.01); H01L 31/02963 (2013.01); H01L 31/02966 (2013.01); H01L 31/022466 (2013.01); H01L 31/03925 (2013.01); H01L 31/072 (2013.01); H01L 31/073 (2013.01); H01L 31/1832 (2013.01); H01L 31/1836 (2013.01); Y02E 10/543 (2013.01); Y02P 70/50 (2015.11);
Abstract
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.