The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Mar. 27, 2019
Fuji Electric Co., Ltd., Kawasaki, JP;
Yuichi Hashizume, Matsumoto, JP;
Keishirou Kumada, Matsumoto, JP;
Yoshihisa Suzuki, Matsumoto, JP;
Yasuyuki Hoshi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A source pad of a main semiconductor element is electrically connected to an n-type source region via a barrier metal. A temperature sensing part is a poly-silicon diode formed by a pn junction between a p-type poly-silicon layer that is a p-type anode region and an n-type poly-silicon layer that is an n-type cathode region. The temperature sensing part is provided, via the field insulating film, on a front surface of a same semiconductor substrate as the main semiconductor element. An anode pad and a cathode pad are in direct contact with the p-type poly-silicon layer and the n-type poly-silicon layer, respectively. The source pad, the anode pad, and the cathode pad are aluminum alloy films.