The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Sep. 13, 2021
Walter Tony Wohlmuth, Taipei, TW;
Walter Tony Wohlmuth, Taipei, TW;
Abstract
A field effect transistor comprising: a first semiconductor structure, the first semiconductor structure having a channel layer; a second semiconductor structure, the second semiconductor structure is arranged on the first semiconductor structure, and the second semiconductor structure is stacked in sequence from bottom to top with a Schottky layer, a first etch stop layer, a wide recess layer, an ohmic contact layer, and a narrow recess, a wide recess is opened in the ohmic contact layer, so that the upper surface of the wide recess layer forms a wide recess area and the upper surface of the Schottky layer forms a narrow recess area; at least one delta-doped layer, a gate metal contact, the gate metal contact is formed inside the wide recess a source metal contact; and a drain metal contact, and the drain metal contact is located on the other side of the gate metal contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile