The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Oct. 21, 2021
Lapis Semiconductor Co., Ltd., Yokohama, JP;
Kenichi Furuta, Yokohama, JP;
Masao Tsujimoto, Yokohama, JP;
Nobuhiro Terada, Yokohama, JP;
Masahiro Haraguchi, Yokohama, JP;
Tsuyoshi Inoue, Yokohama, JP;
Yuuichi Kaneko, Yokohama, JP;
Hiroki Kuroki, Yokohama, JP;
Takaaki Kodaira, Yokohama, JP;
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Abstract
A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.