The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Oct. 18, 2021
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Shinnosuke Takahashi, Nagaokakyo, JP;

Masayuki Aoike, Nagaokakyo, JP;

Masatoshi Hase, Nagaokakyo, JP;

Fumio Harima, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3738 (2013.01); H01L 23/3736 (2013.01); H01L 24/08 (2013.01); H01L 24/13 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 24/05 (2013.01); H01L 24/24 (2013.01); H01L 29/7371 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/24146 (2013.01);
Abstract

A bond layer including at least one metal region in a plan view is disposed on a surface layer portion of a substrate formed from a semiconductor. A semiconductor element is disposed on the bond layer and includes a first transistor disposed on a first metal region that is a metal region as the at least one metal region of the bond layer and including a collector layer electrically coupled to the first metal region, a base layer disposed on the collector layer, and an emitter layer disposed on the base layer. A first emitter electrode is disposed on the emitter layer of the first transistor. A first conductor protrusion is disposed on the first emitter electrode. The thermal conductivity of the semiconductor material of the surface layer portion is higher than that of each of the collector layer, the base layer, and the emitter layer of the first transistor.


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