The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Nov. 30, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tsang-Po Yang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); H01L 29/41775 (2013.01);
Abstract

The present disclosure provides a semiconductor structure having a test structure. The semiconductor structure includes a wafer and a test structure disposed on the wafer. The test structure includes a first device having a first source/drain layer and a first gate layer disposed above the first source/drain layer; a second device, having a second source/drain layer and a second gate layer disposed above the second source/drain layer, the second gate layer connected to the first gate layer; a third device, disposed adjacent to the first device and having a third source/drain layer. The first gate layer is disposed above the third source/drain layer, and the first gate layer is disposed along a first direction and the second gate layer is disposed along a second direction orthogonal to the first direction.


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