The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Feb. 18, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Rainer Markus Schaller, Saal a.d. Donau, DE;

Horst Theuss, Wenzenbach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/673 (2006.01); H01L 23/049 (2006.01); H01L 23/20 (2006.01); H01L 21/67 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67376 (2013.01); B81C 1/00285 (2013.01); H01L 21/67126 (2013.01); H01L 21/67393 (2013.01); H01L 23/049 (2013.01); H01L 23/20 (2013.01); B81C 2203/0145 (2013.01);
Abstract

A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.


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