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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11875869 B1

PDFFull Text
Date of Patent:
Jan. 16, 2024

Filed:

Nov. 17, 2021

Insulated gate bipolar transistor physical model

Applicant:

Naval University of Engineering, Wuhan, CN;

Inventors:

Yifei Luo, Wuhan, CN;

Fei Xiao, Wuhan, CN;

Binli Liu, Wuhan, CN;

Yongle Huang, Wuhan, CN;

Xin Li, Wuhan, CN;

Yingjie Jia, Wuhan, CN;

Jing Pu, Wuhan, CN;

Youxing Xiong, Wuhan, CN;

Assignee:

NAVAL UNIVERSITY OF ENGINEERING, Wuhan, CN;

Attorneys:

MATTHIAS SCHOLL P.C.

Matthias Scholl

Primary Examiner:

Nghia M Doan

Int. Cl.
CPC ...
G06F 30/367 (2020.01); H01L 29/739 (2006.01); G11C 29/54 (2006.01); G06F 30/39 (2020.01); G06F 30/3308 (2020.01);
U.S. Cl.
CPC ...
G11C 29/54 (2013.01); G06F 30/3308 (2020.01); G06F 30/39 (2020.01); H01L 29/7393 (2013.01);
Abstract

An IGBT physical model parameter extraction method includes obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of a correspondence between IGBT dynamic and static features and the IGBT physical model parameter and in combination with an experiment measurement result of the IGBT physical model parameter.

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Luo, Yifei. (2024). Insulated gate bipolar transistor physical model (U.S. Patent No. 11875869). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11875869

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