The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Feb. 16, 2022
Universite D'aix Marseille, Marseilles, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Jean-Michel Portal, Saint-Savournin, FR;
Vincenzo Della Marca, Marseilles, FR;
Jean-Pierre Walder, Marseilles, FR;
Julien Gasquez, Echirolles, FR;
Philippe Boivin, Venelles, FR;
Universite D'Aix Marseille, Marseilles, FR;
Centre National De La Recherche Scientifique, Paris, FR;
STMicroelectro (Crolles 2) SAS, Crolles, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Abstract
Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.