The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Aug. 05, 2022
Shanghaitech University, Shanghai, CN;
SHANGHAITECH UNIVERSITY, Shanghai, CN;
Abstract
An enhanced dynamic random access memory (eDRAM)-based computing-in-memory (CIM) convolutional neural network (CNN) accelerator comprises four P2ARAM blocks, where each of the P2ARAM blocks includes a 5T1C ping-pong eDRAM bit cell array composed of 64×16 5T1C ping-pong eDRAM bit cells. In each of the P2ARAM blocks, 64×2 digital time converters convert a 4-bit activation value into different pulse widths from a row direction and input the pulse widths into the 5T1C ping-pong eDRAM bit cell array for calculation. A total of 16×2 convolution results are output in a column direction of the 5T1C ping-pong eDRAM bit cell array. The CNN accelerator uses the 5T1C ping-pong eDRAM bit cells to perform multi-bit storage and convolution in parallel. An S2M-ADC scheme is proposed to allot an area of an input sampling capacitor of an ABL to sign-numerical SAR ADC units of a C-DAC array without adding area overhead.