The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Feb. 08, 2021
Applicant:

Shanghai Jiao Tong University, Shanghai, CN;

Inventors:

Weiwen Zou, Shanghai, CN;

Shaofu Xu, Shanghai, CN;

Jing Wang, Shanghai, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 7/00 (2006.01); G02F 1/03 (2006.01);
U.S. Cl.
CPC ...
G02F 7/00 (2013.01); G02F 1/0305 (2013.01); G02F 1/0327 (2013.01); G02F 2202/105 (2013.01); G02F 2202/20 (2013.01);
Abstract

A monolithically integrated optical analog-to-digital conversion system based on a lithium niobate-silicon wafer, and a method for manufacturing the same, wherein a novel wafer (lithium niobate-silicon wafer) is used to implement the monolithically integrated optical analog-to-digital conversion system having multiple photonic devices, including an electro-optical modulator array, a tunable delay line array, an electronic circuit, and the like. As a result, multiple devices are manufactured on one chip, and the performance advantages and the stability of the system are guaranteed. Moreover, the present invention provides a CMOS-compatible method for manufacturing the system, so that the monolithically integrated optical analog-to-digital conversion system based on the lithium niobate-silicon wafer can be implemented on platforms of most chip manufacturers.


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