The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Apr. 07, 2022
Applicant:

National Research Council of Canada, Ottawa, CA;

Inventors:

Eben Dy, Richmond, CA;

Wei Qu, Vancouver, CA;

Zhong Xie, Delta, CA;

Jun Shen, Richmond, CA;

Kidus Y Tufa, New Westminster, CA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B 17/06 (2006.01); B32B 15/04 (2006.01); C03C 3/32 (2006.01); G01N 27/30 (2006.01); G01N 27/36 (2006.01); C03C 3/12 (2006.01); C03C 4/18 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
C03C 3/321 (2013.01); C03C 3/12 (2013.01); C03C 3/32 (2013.01); C03C 3/323 (2013.01); C03C 3/325 (2013.01); C03C 4/18 (2013.01); G01N 27/301 (2013.01); G01N 27/36 (2013.01); G01N 27/414 (2013.01);
Abstract

A pseudo-reference electrode comprising a pseudo-reference glass material backed by a silver conductor comprising silver metal, wherein the pseudo-reference glass material is a chalcogenide glass comprising a silver chalcogenide Ag2Ch, wherein Ch denotes a chalcogen, or a halide glass comprising a silver halide and at least one glass-forming oxide of a metal or a metalloid, a mixture of two or more of these glasses, or a composite of at least one of these glasses. This pseudo-reference electrode can be used in ion-selective electrode (ISE) sensors and ion-selective field effect transistors (ISFETs).


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