The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Sep. 17, 2020
Applicants:

Ajou University Industry-academic Cooperation Foundation, Suwon-si, KR;

Industry-university Cooperation Foundation Hanyang University Erica Campus, Ansan-si, KR;

Inventors:

Sang Woon Lee, Suwon-si, KR;

Tae Joo Park, Ansan-si, KR;

Hae Jun Jung, Suwon-si, KR;

Sung Min Kim, Incheon, KR;

Hye Ju Kim, Suwon-si, KR;

Seong Hwan Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8833 (2023.02); H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02);
Abstract

Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.


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