The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Jan. 21, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yoshiaki Sonobe, Yokohama, JP;

Syuta Honda, Osaka, JP;

Yasuaki Nakamura, Ehime, JP;

Yoshihiro Okamoto, Ehime, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetic memory device includes a first magnetic memory device, a second magnetic memory device, a pulse power supplying current pulses to the first and second magnetic memory devices; and a switch configured to selectively connect the pulse power to one of the first and second magnetic memory devices. A resistance value of an MTJ device composed of the first fixed layer, the first non-magnetic layer, and the free layer is different from a resistance value of a MTJ device composed of the second fixed layer, the second non-magnetic layer, and the free layer.


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