The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Feb. 14, 2020
Applicant:

Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Hubei, CN;

Inventor:

Jiajia Luo, Hubei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/60 (2023.01); C07C 255/34 (2006.01); C07C 255/56 (2006.01); C07D 241/46 (2006.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01);
U.S. Cl.
CPC ...
H10K 85/6572 (2023.02); C07C 255/34 (2013.01); C07C 255/56 (2013.01); C07D 241/46 (2013.01); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/171 (2023.02); H10K 85/615 (2023.02); H10K 85/652 (2023.02);
Abstract

A P-type dopant is provided, which is a planar aromatic compound having different numbers of fluorine atoms and cyano groups connected at a periphery thereof, and allows adjustment of highest occupied molecular orbital (HOMO) energy levels and lowest unoccupied molecular orbital (LUMO) energy levels and effectively increases luminous efficiency of a light emitting layer. Moreover, an organic light emitting diode is disclosed, including an anode, a cathode, and a light emitting structure located between the anode and the cathode, wherein a hole injecting layer of the light emitting structure is a hole injecting layer including the P-type dopant described above.


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