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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11871617 B1

PDFFull Text
Date of Patent:
Jan. 09, 2024

Filed:

Dec. 08, 2022

Light emitting display device and manufacturing method thereof

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Keun Woo Kim, Seongnam-si, KR;

Tae Wook Kang, Seongnam-si, KR;

Han Bit Kim, Seoul, KR;

Bum Mo Sung, Hanam-si, KR;

Do Kyeong Lee, Yongin-si, KR;

Jae Seob Lee, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:

CANTOR COLBURN LLP

Primary Examiner:

Mohammed R Alam

Int. Cl.
CPC ...
H01L 27/32 (2006.01); H10K 59/121 (2023.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02661 (2013.01); H01L 21/02675 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 27/1274 (2013.01); H01L 29/42384 (2013.01); H01L 29/6675 (2013.01); H01L 29/78645 (2013.01); H01L 29/78672 (2013.01); H01L 29/78696 (2013.01); H01L 2029/42388 (2013.01); H10K 59/1201 (2023.02);
Abstract

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.

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