The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Sep. 10, 2021
Kioxia Corporation, Tokyo, JP;
Kunifumi Suzuki, Yokkaichi, JP;
Yuuichi Kamimuta, Yokkaichi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a first gate electrode layer; a second gate electrode layer provided apart from the first gate electrode layer in the first direction; and a gate insulating layer containing oxygen and at least one metal element of hafnium or zirconium, the gate insulating layer including a first region between the first gate electrode layer and the semiconductor layer, a second region between the first gate electrode layer and the second gate electrode layer, and a third region between the second gate electrode layer and the semiconductor layer, the first region including a crystal of an orthorhombic crystal system or a trigonal crystal system as a main constituent substance, and a distance between the second region and the semiconductor layer being larger than a distance between the first region and the semiconductor layer.