The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Sep. 10, 2021
Kioxia Corporation, Tokyo, JP;
Atsushi Murakoshi, Yokohama, JP;
Tomoya Kawai, Kawasaki, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device according to an embodiment includes: a first interlayer insulating layer and a second interlayer insulating layer that are arranged in a first direction; a gate electrode layer provided between the first interlayer insulating layer and the second interlayer insulating layer; a semiconductor layer extending in the first direction and facing the gate electrode layer in a second direction intersecting the first direction; a first insulating layer provided between the gate electrode layer and the semiconductor layer; a charge storage layer provided between the gate electrode layer and the first insulating layer and containing a metal element; a second insulating layer provided between the gate electrode layer and the charge storage layer; and a first region provided between the charge storage layer and the first insulating layer and containing manganese (Mn), silicon (Si), and oxygen (O).