The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Oct. 11, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yong-Hoon Son, Yongin-si, KR;

Jae Hoon Kim, Seoul, KR;

Kwang-ho Park, Cheonan-si, KR;

Seungjae Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H10B 12/00 (2023.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H01L 21/02603 (2013.01); H01L 21/28518 (2013.01); H01L 21/30604 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01); H10B 12/01 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10B 12/50 (2023.02);
Abstract

A semiconductor memory device includes a stack structure comprising a plurality of layers vertically stacked on a substrate, each layer including a semiconductor pattern, a gate electrode extending in a first direction on the semiconductor pattern, and a data storage element electrically connected to the semiconductor pattern, a plurality of vertical insulators penetrating the stack structure, the vertical insulators arranged in the first direction, and a bit line provided at a side of the stack structure and extending vertically. The bit line electrically connects the semiconductor patterns which are stacked. Each of the vertical insulators includes first and second vertical insulators adjacent to each other. The gate electrode includes a connection portion disposed between the first and second vertical insulators.


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