The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Jul. 20, 2021
Microtera Semiconductor (Guangzhou) Co., Ltd., Guangzhou, CN;
Franco Maloberti, Guangzhou, CN;
Alper Akdikmen, Guangzhou, CN;
Yao Liu, Guangzhou, CN;
Sen Liu, Guangzhou, CN;
Jianping Li, Guangzhou, CN;
Xinglong Liu, Guangzhou, CN;
Linsen Shi, Guangzhou, CN;
Guichun Ban, Guangzhou, CN;
Xiaowei Liu, Guangzhou, CN;
Haibin Liu, Guangzhou, CN;
Huahua Duan, Guangzhou, CN;
Chao Yang, Guangzhou, CN;
Jie Yin, Guangzhou, CN;
MICROTERA SEMICONDUCTOR (GUANGZHOU) CO., LTD., Guangzhou, CN;
Abstract
An over-current protection circuit for composite transistor devices is provided, connected between an input terminal and a load, and including: a control-terminal voltage-generation module whose output voltage varies with its input voltage when driven by a first voltage, wherein the output voltage of the control-terminal voltage-generation module serves as a control-terminal voltage; a composite transistor device, connected between the control-terminal voltage-generation module and the load, configured to conduct in response to the control-terminal voltage and a second voltage to generate an output current flowing through the load; and an over-current protection module, connected between the composite transistor device and the load, wherein when the output current of the composite transistor device exceeds a preset limit, a clamping voltage is applied to the composite transistor device by the over-current protection module to limit a current flowing through the composite transistor device, thereby limiting the output current of the composite transistor device.