The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Sep. 26, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Yohei Hokama, Tokyo, JP;
Yosuke Suzuki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor laser in which a PD unit monitoring an optical output is integrated is provided. A semiconductor laser () includes: a DFB unit including a back surface side first cladding layer (), a first diffraction grating layer (), a light emitting layer () having a first MQW structure and emitting a laser beam, a front surface side first cladding layer (), and a first contact layer () which are stacked; a DBR unit including a back surface side second cladding layer () having a resistivity higher than that of the back surface side first cladding layer (), a second diffraction grating layer () reflecting part of the laser beam toward the DFB unit, a first core layer () guiding a remnant of the laser beam and having an effective bandgap energy smaller than that of the first MQW structure, and a front surface side second cladding layer () having a resistivity higher than that of the front surface side first cladding layer () which are stacked; and a PD unit including a back surface side third cladding layer (), a second core layer () having a second MQW structure absorbing the remnant of the laser beam guided by the first core layer (), a front surface side third cladding layer (), and a second contact layer () which are stacked.