The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Jul. 12, 2022
Applicant:

Lumileds Llc, San Jose, CA (US);

Inventor:

Venkata Ananth Tamma, San Jose, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/60 (2010.01); H01L 33/10 (2010.01); H01L 33/58 (2010.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 21/02513 (2013.01); H01L 21/302 (2013.01); H01L 21/322 (2013.01); H01L 27/15 (2013.01); H01L 33/10 (2013.01); H01L 33/32 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 2933/0083 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A light emitting device comprises a semiconductor diode structure configured to emit light, a substrate that is transparent to light emitted by the semiconductor diode structure, and a reflective nanostructured layer. The reflective nanostructured layer may be disposed on or adjacent to a bottom surface of the substrate and configured to reflect toward and through a side wall surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence. Alternatively, the reflective nanostructured layer may be disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.


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