The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Dec. 29, 2020
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Che-Hung Lin, Hsinchu, TW;
De Shan Kuo, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/22 (2013.01); H01L 33/382 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A method of manufacturing a light-emitting element, includes: providing a base having an upper surface and a lower surface; forming a semiconductor stack on the upper surface; removing part of the semiconductor stack to form an isolation region surrounding the semiconductor stack; forming a dielectric stack covering the semiconductor stack and the isolation region; and applying a first laser having a first wavelength to irradiate the base along the isolation region; wherein the dielectric stack has a reflectance of 10%-50% and/or a transmittance of 50%-90% for the first wavelength.