The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Oct. 16, 2020
Applicant:
Vuereal Inc., Waterloo, CA;
Inventors:
Jian Yin, Waterloo, CA;
Dayan Ban, Waterloo, CA;
Ehsanollah Fathi, Waterloo, CA;
Gholamreza Chaji, Waterloo, CA;
Assignee:
VueReal Inc., Waterloo, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/14 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/025 (2013.01); H01L 33/145 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01);
Abstract
The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.