The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Aug. 25, 2020
Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Lei Yan, Beijing, CN;
Jun Fan, Beijing, CN;
Yezhou Fang, Beijing, CN;
Feng Li, Beijing, CN;
Wei Li, Beijing, CN;
Lei Li, Beijing, CN;
Yusheng Liu, Beijing, CN;
Yanyan Meng, Beijing, CN;
ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., Inner Mongolia, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A thin film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin film transistor includes an active layer, a gate insulating layer, and a gate electrode; the gate insulating layer is located on one side of the active layer; the gate electrode is located on one side of the gate insulating layer distant from the active layer; the gate electrode includes an opening a part of the active layer overlapped with the opening includes a first lightly doped region, a first heavily doped region, and a second lightly doped region that are sequentially arranged along a first direction parallel to a plane where the active layer is located.