The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Oct. 25, 2019
Applicant:

The Industry & Academic Cooperation IN Chungnam National University (Iac), Daejeon, KR;

Inventors:

Soon-Gil Yoon, Daejeon, KR;

Byeong-Ju Park, Daejeon, KR;

Yi-Re Han, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/167 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 21/041 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 29/66045 (2013.01); H01L 29/78618 (2013.01); H01L 29/78684 (2013.01);
Abstract

Disclosed is a high-quality and high-functional graphene-based TFT, including: a gate electrode, a gate insulating layer disposed on the gate electrode; an active layer including a nitrogen-doped graphene layer, on which disposed in a partial region of the gate insulating layer; a first electrode disposed on a region of one side of the active layer; and a second electrode disposed on a region of the other side of the active layer. The present invention allows obtaining the TFT having excellent characteristics by directly growing graphene on a Ti layer, implementing damages with remote plasma, and doping with nitrogen gas to fabricate a graphene active layer.


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