The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Nov. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hae Geon Jung, Yongin-si, KR;

Dong Kwon Kim, Suwon-si, KR;

Cheol Kim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); H01L 29/0847 (2013.01); H01L 29/4236 (2013.01);
Abstract

A semiconductor device includes a substrate, a first active pattern that includes a first side wall and a second side wall opposite to the first side wall in a second horizontal direction, a first insulating structure in a first trench extending in the first horizontal direction on the first side wall of the first active pattern, a second insulating structure in a second trench extending in the first horizontal direction on the second side of the first active pattern, and includes a first insulating layer on side walls and a bottom surface of the second trench, and a second insulating layer in the second trench on the first insulating layer, a gate-cut extending in the first horizontal direction on the first insulating structure, and a gate electrode extending in the second horizontal direction on the first active pattern.


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