The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Nov. 01, 2018
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei, CN;

Inventor:

Yuan Yan, Hubei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 31/10 (2006.01); G06F 3/042 (2006.01); G06F 3/041 (2006.01); H01L 31/028 (2006.01); G06V 40/13 (2022.01);
U.S. Cl.
CPC ...
H01L 27/1214 (2013.01); G06F 3/0412 (2013.01); G06F 3/0421 (2013.01); G06V 40/13 (2022.01); G06V 40/1318 (2022.01); H01L 27/1251 (2013.01); H01L 31/0284 (2013.01); H01L 31/10 (2013.01); G06F 2203/04103 (2013.01); G06F 2203/04107 (2013.01);
Abstract

A display panel and a manufacturing method thereof are provided. The display panel comprises a glass substrate, an insulating layer, a polysilicon layer, a gate insulating layer, a gate layer, an interlayer insulating layer, and a source-drain contacting layer, wherein the polysilicon layer is defined with a first doped region, a second doped region, and a third doped region. The source-drain contacting layer contacts the first doped region and the third doped region. A doping type of the first doped region and a doping type of the third doped region are different so that the first doped region and the third doped region form a PN structure. Doping type of the first doped region and a doping type of the second doped region are same.


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