The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

Jun. 05, 2022
Applicant:

Silicon Motion, Inc., Hsinchu County, TW;

Inventors:

Tsung-Chieh Yang, Hsinchu, TW;

Hsiao-Te Chang, Hsinchu County, TW;

Wen-Long Wang, Hsinchu, TW;

Assignee:

Silicon Motion, Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 3/0604 (2013.01); G06F 3/0622 (2013.01); G06F 3/0629 (2013.01); G06F 3/0638 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01);
Abstract

A method for performing memory access of a Flash cell of a Flash memory includes: performing a plurality of sensing operations respectively corresponding to a plurality of sensing voltages to generate a first digital value and a second digital value of the Flash cell, the second digital value representing at least one candidate threshold voltage of the Flash cell; determining a threshold voltage of the Flash cell according to whether the at least one candidate threshold voltage is high or low; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.


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