The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Mar. 22, 2022
Ayar Labs, Inc., Santa Clara, CA (US);
Roy Edward Meade, Lafayette, CA (US);
Chen Sun, Berkeley, CA (US);
Shahab Ardalan, Santa Clara, CA (US);
John Fini, Albany, CA (US);
Forrest Sedgwick, Santa Clara, CA (US);
Ayar Labs, Inc., Santa Clara, CA (US);
Abstract
An intact semiconductor wafer (wafer) includes a plurality of die. Each die has a top layer including routings of conductive interconnect structures electrically isolated from each other by intervening dielectric material. A top surface of the top layer corresponds to a top surface of the wafer. Below the top layer, each die has a device layer including optical devices and electronic devices. Each die has a cladding layer below the device layer and on a substrate of the wafer. Each die includes a photonic test port within the device layer. For each die, a light transfer region is formed within the intact wafer to extend through the top layer to the photonic test port within the device layer. The light transfer region provides a window for transmission of light into and out of the photonic test port from and to a location on the top surface of the wafer.