The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Oct. 01, 2020
King Abdullah University of Science and Technology, Thuwal, SA;
Mani Teja Vijjapu, Thuwal, SA;
Sandeep G. Surya, Thuwal, SA;
Saravanan Yuvaraja, Thuwal, SA;
Khaled Nabil Salama, Thuwal, SA;
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;
Abstract
A gas sensor includes a gate electrode; a dielectric layer covering one surface of the gate electrode; an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively. The IGZO thin-film has an In concentration of 11%+/−3%, Ga concentration of 11%+/−3%, Zn concentration of 7%+/−3%, and O concentration of 71%+/−3%, with a sum of the concentrations being 100%, and the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.