The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Jan. 12, 2021
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Moungi Bawendi, Cambridge, MA (US);
Daniel Franke, Cambridge, MA (US);
Matthias Ginterseder, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/88 (2006.01); C09K 11/08 (2006.01); H01L 29/06 (2006.01); C01G 28/00 (2006.01); C01B 19/04 (2006.01); C01B 17/20 (2006.01); C01G 30/00 (2006.01); C01B 21/072 (2006.01); C01B 21/06 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/883 (2013.01); B82Y 40/00 (2013.01); C01B 17/20 (2013.01); C01B 19/04 (2013.01); C01B 21/0632 (2013.01); C01B 21/072 (2013.01); C01G 28/00 (2013.01); C01G 30/00 (2013.01); C09K 11/0883 (2013.01); H01L 29/0665 (2013.01);
Abstract
A semiconductor nanocrystal can be made by an in situ redox reaction between an M donor and an E donor.