The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jul. 07, 2021
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Byung Jick Cho, Icheon, KR;

Yong Hun Sung, Icheon, KR;

Ji Sun Han, Icheon, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H10N 70/00 (2023.01); G06F 12/0831 (2016.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); G06F 12/0831 (2013.01); H10B 63/80 (2023.02); H10N 70/883 (2023.02); H10N 70/8845 (2023.02);
Abstract

An electronic device comprises a semiconductor memory that includes: a first line; a second line disposed over the first line to be spaced apart from the first line; a variable resistance layer disposed between the first line and the second line; a selection element layer disposed between the first line and the variable resistance layer or between the second line and the variable resistance layer; and one or more electrode layers disposed over or under the selection element layer or disposed over and under the selection element layer, the one or more electrode layers being adjacent to the selection element layer, wherein each of the one or more electrode layers includes a first electrode layer and a second electrode layer, the second electrode layer including a second carbon layer containing nitrogen, the first electrode layer including a first carbon layer containing a lower concentration of nitrogen or containing no nitrogen.


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