The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jul. 12, 2021
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

Harold Frank Greer, Pasadena, CA (US);

Andrew D. Beyer, Pasadena, CA (US);

Matthew D. Shaw, Pasadena, CA (US);

Daniel P. Cunnane, Pasadena, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/01 (2023.01); H10N 60/83 (2023.01);
U.S. Cl.
CPC ...
H10N 60/01 (2023.02); H10N 60/83 (2023.02);
Abstract

A method for etching a surface including obtaining a structure comprising a plurality of nanowires on or above a substrate and a dielectric layer on or above the nanowires, wherein the dielectric layer comprises protrusions formed by the underlying nanowires; reacting a surface of the dielectric layer with a reactant, comprising a gas or a plasma, to form a reactive layer on the dielectric layer, wherein the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by the protrusions; and selectively etching the reactive layer, wherein the etching etches the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.


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