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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11864422 B1

PDFFull Text
Date of Patent:
Jan. 02, 2024

Filed:

Sep. 27, 2021

Method for fabricating displaying backplane, displaying backplane and displaying device

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jing Wang, Beijing, CN;

Hongwei Tian, Beijing, CN;

Ming Liu, Beijing, CN;

Jia Zhao, Beijing, CN;

Qiuhua Meng, Beijing, CN;

Ziang Han, Beijing, CN;

Assignee:

BOE Technology Group Co., Ltd., Beijing, CN;

Attorney:

Intellectual Valley Law, P.C.

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/56 (2006.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/124 (2023.01); H10K 71/00 (2023.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 59/122 (2023.02); H10K 59/124 (2023.02); H10K 71/00 (2023.02); H01L 21/02565 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10K 59/1201 (2023.02);
Abstract

The present disclosure provides a method for fabricating a displaying backplane, a displaying backplane and a displaying device, and relates to the technical field of displaying. The method includes forming a first active layer and a second active layer on a substrate base plate; forming a first grid insulating layer covering the first active layer and the second active layer; forming a first grid on the first grid insulating layer; performing ion implantation to the first no-channel regions, the second no-channel regions and the second channel region, to reduce oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region; and forming a second grid on the first grid insulating layer.

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