The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Sep. 11, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Jumpei Sato, Kawasaki Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11573 (2017.01); H10B 43/40 (2023.01); G11C 16/08 (2006.01); G11C 16/30 (2006.01); G11C 16/24 (2006.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01); H10B 43/20 (2023.02); H10B 43/35 (2023.02);
Abstract

According to one embodiment, a semiconductor memory device includes the following structure. A memory array is provided on a first-direction side of a substrate. The first direction intersects the substrate. The first peripheral circuit is provided between the substrate and the memory array. The second peripheral circuit is provided between the substrate and the memory array and on a second-direction side of the first peripheral circuit. The second direction intersects the first direction. The sense amplifier is provided between the substrate and the memory array and between the first and second peripheral circuits. A second-direction length of the second peripheral circuit is smaller than half a second-direction length of the sense amplifier.


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