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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11863152 B1

PDFFull Text
Date of Patent:
Jan. 02, 2024

Filed:

Oct. 19, 2022

Elastic wave device and method for manufacturing the same

Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Munehisa Watanabe, Nagaokakyo, JP;

Hideki Iwamoto, Nagaokakyo, JP;

Hajime Kando, Nagaokakyo, JP;

Syunsuke Kido, Nagaokakyo, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Kyoto, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Bryan P Gordon

Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 3/04 (2006.01); H03H 3/08 (2006.01); H10N 30/01 (2023.01); H10N 30/80 (2023.01); H10N 30/85 (2023.01); H10N 30/87 (2023.01); H03H 9/54 (2006.01); H03H 3/10 (2006.01);
U.S. Cl.
CPC ...
H03H 9/0222 (2013.01); H03H 3/02 (2013.01); H03H 3/04 (2013.01); H03H 3/08 (2013.01); H03H 3/10 (2013.01); H03H 9/02574 (2013.01); H03H 9/02834 (2013.01); H03H 9/54 (2013.01); H10N 30/01 (2023.02); H10N 30/80 (2023.02); H10N 30/85 (2023.02); H10N 30/87 (2023.02); H10N 30/877 (2023.02); H03H 2003/023 (2013.01); H03H 2003/027 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49005 (2015.01); Y10T 29/49155 (2015.01);
Abstract

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

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