The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Jul. 11, 2022
Applicant:
Navitas Semiconductor Limited, Dublin, IE;
Inventors:
Daniel M. Kinzer, El Segundo, CA (US);
Santosh Sharma, Austin, TX (US);
Ju Jason Zhang, Monterey Park, CA (US);
Assignee:
Navitas Semiconductor Limited, Dublin, IE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02J 7/00 (2006.01); H01L 23/495 (2006.01); H01L 27/02 (2006.01); H01L 23/62 (2006.01); H02M 1/088 (2006.01); H03K 3/012 (2006.01); H01L 29/20 (2006.01); H03K 17/10 (2006.01); H03K 19/0185 (2006.01); H01L 25/07 (2006.01); H02M 3/157 (2006.01); H03K 3/356 (2006.01); H01L 27/088 (2006.01); H01L 23/528 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H02M 1/00 (2006.01); H02M 3/155 (2006.01);
U.S. Cl.
CPC ...
H02J 7/00 (2013.01); H01L 23/49503 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/528 (2013.01); H01L 23/62 (2013.01); H01L 25/072 (2013.01); H01L 27/0248 (2013.01); H01L 27/088 (2013.01); H01L 27/0883 (2013.01); H01L 29/1033 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H02M 1/088 (2013.01); H02M 3/157 (2013.01); H02M 3/1584 (2013.01); H02M 3/1588 (2013.01); H03K 3/012 (2013.01); H03K 3/356017 (2013.01); H03K 17/102 (2013.01); H03K 19/018507 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01); H02M 1/0048 (2021.05); H02M 3/155 (2013.01); Y02B 40/00 (2013.01); Y02B 70/10 (2013.01);
Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.