The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

Jun. 17, 2022
Applicant:

Kyocera Sld Laser, Inc., Goleta, CA (US);

Inventors:

James W. Raring, Santa Barbara, CA (US);

Melvin Mclaurin, Santa Barbara, CA (US);

Paul Rudy, Goleta, CA (US);

Po Shan Hsu, Arcadia, CA (US);

Alexander Sztein, Santa Barbara, CA (US);

Assignee:

KYOCERA SLD Laser, Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/323 (2006.01); H01S 5/22 (2006.01); H01S 5/042 (2006.01); H01S 5/0234 (2021.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/021 (2013.01); H01S 5/0206 (2013.01); H01S 5/0213 (2013.01); H01S 5/0215 (2013.01); H01S 5/0216 (2013.01); H01S 5/0217 (2013.01); H01S 5/0218 (2013.01); H01S 5/0234 (2021.01); H01S 5/0425 (2013.01); H01S 5/22 (2013.01); H01S 5/222 (2013.01); H01S 5/2214 (2013.01); H01S 5/32308 (2013.01); H01S 5/04253 (2019.08); H01S 5/04254 (2019.08); H01S 5/2009 (2013.01); H01S 5/2031 (2013.01); H01S 5/30 (2013.01); H01S 2301/173 (2013.01); H01S 2302/00 (2013.01);
Abstract

An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.


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