The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

May. 30, 2019
Applicant:

Nippon Telegraph and Telephone Corporation, Tokyo, JP;

Inventors:

Takahiko Shindo, Musashino, JP;

Naoki Fujiwara, Musashino, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/125 (2006.01); H01S 5/026 (2006.01); H01S 5/12 (2021.01);
U.S. Cl.
CPC ...
H01S 5/125 (2013.01); H01S 5/026 (2013.01); H01S 5/0265 (2013.01); H01S 5/1218 (2013.01);
Abstract

A 1.3 μm-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.


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