The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Apr. 05, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Ryota Takemura, Tokyo, JP;
Matobu Kikuchi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor light-receiving element () is a semiconductor light-receiving element in which a multi-plication layer (), an electric-field control layer (), a light absorption layer () and a window layer () are sequentially formed on a semiconductor substrate (), and a p-type region () is formed in the window layer (). The p-type region () has a first p-type portion () and a second p-type portion () whose current multiplication factor due to light incidence is larger than that of the first p-type portion (). The first p-type portion () is formed as a central portion of the p-type region (), the central portion including a central axis () perpendicular to the semiconductor substrate (), and the second p-type portion () is formed on an outer periphery of the central portion in a radial direction about the central axis ().