The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2024

Filed:

May. 06, 2022
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventor:

Oliver Blank, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/42336 (2013.01); H01L 29/7813 (2013.01);
Abstract

A transistor device includes field plate contacts that electrically connect a final metallization layer to field electrodes in underlying trenches, and mesa contacts that electrically connect the final metallization layer to semiconductor mesas confined by the trenches. Each field plate contact is divided into field plate contact segments that are separated from one another. Each mesa contact is divided into mesa contact segments that are separated from one another. In a first area adjacent to an end of the trenches, a first line that runs perpendicular to the trenches intersects a first field plate contact segment of the field plate contacts and a first mesa contact segment of the mesa contacts. In a second area spaced inward from the first area, a second line that runs perpendicular to the trenches intersects a second field plate contact segment of the field plate contacts and a second mesa contact segment of the mesa contacts.


Find Patent Forward Citations

Loading…