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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11862686 B1

PDFFull Text
Date of Patent:
Jan. 02, 2024

Filed:

Jul. 02, 2020

Nitride semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Shinya Takashima, Tokyo, JP;

Ryo Tanaka, Tokyo, JP;

Katsunori Ueno, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

CHEN YOSHIMURA LLP

Primary Examiner:

Benjamin P Sandvik

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/02175 (2013.01); H01L 21/2253 (2013.01); H01L 21/3245 (2013.01); H01L 29/0619 (2013.01); H01L 29/0878 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract

A method for manufacturing a nitride semiconductor device includes: selectively ion-implanting an element that is other than p-type impurities and n-type impurities into a first region in a first primary surface of a gallium nitride layer so as to generate crystal defects in the first region; selectively ion-implanting a p-type impurity into a second region in the gallium nitride layer, the second region being shallower than the first region in a depth direction and being within the first region in a plan view; and thermally treating said gallium nitride layer that has been ion-implanted with said element and said p-type impurity so as to thermally diffuse said p-type impurity in the second region into a third region that is within the first region and that surrounds a bottom and sides of the second region.

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