The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Sep. 26, 2019
Sumitomo Electric Industries, Ltd., Osaka, JP;
Tsubasa Honke, Osaka, JP;
Kyoko Okita, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A recycle wafer of silicon carbide has a silicon carbide substrate and a first silicon carbide layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide layer is in contact with the first main surface. The silicon carbide substrate includes a substrate region that is within 10 μm from the first main surface toward the second main surface. In a direction perpendicular to the first main surface, a value obtained by subtracting a value that is three times a standard deviation of a nitrogen concentration in the substrate region from an average value of the nitrogen concentration in the substrate region is greater than a minimum value of a nitrogen concentration in the first silicon carbide layer.